Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
نویسندگان
چکیده
Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light how their optical properties, measured cathodoluminescence, relate corresponding atomic structure. Through method spectroscopy–thinning–imaging, demonstrate in plan-view stacking mismatch boundaries intersect pattern correlated observed diminished cathodoluminescence intensity. The results highlight importance avoiding small LED structures due relatively large region non-radiative recombination caused by boundaries.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2023
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0150863